Apparatus and method for repairing broken line of array substrate

ABSTRACT

The present invention provides an apparatus and a method for repairing a broken line of an array substrate. The apparatus includes a repair unit and a heating unit. The repair unit forms a repair line on a broken-line defect of a wire on the array substrate. The heating unit heats the repair line, so that the molecules constituting the repair line are arranged in sequence according a predetermined rule. The present invention can achieve the repair for a longer broken-line defect.

FIELD OF THE INVENTION

The present invention relates to a liquid crystal display (LCD) technology, and especially to an apparatus and a method for repairing a broken line of an array substrate.

BACKGROUND OF THE INVENTION

With a growing development in LCD production techniques, there are high demands for production efficiency of the LCD. An LCD panel includes an array substrate and a color filter substrate. There are plenty of wires, such as data lines and scan lines, being disposed on the array substrate.

In processes of fabricating the array substrate, a broken-line defect may exist in data lines or scan lines due to influences of various factors. Referring to FIG. 1 A, a broken-line defect 11 exists in a wire 10 of FIG. 1 A, such that the wire 10 can not conduct electricity to realize a function of signal transmission.

In prior art, in order to repair the broken-line defect 11 that exists in the wire 10, the broken-line defect 11 of the wire 10 is generally coated with a film by a repair machine for a broken line. A repair line 12 is formed on the broken-line defect for connecting the wire 10, as shown in FIG. 1 B.

Referring to FIG. 1 C, after the repair line 12 is formed by the repair machine for the broken line, molecules on a surface of the repair line 12 are arranged without orders. Thus, lattices 15 (a frame that represents the molecules being in an array of points repeating periodically in three dimensions is called a lattice) which are composed of the molecules are arranged chaotically. Referring to FIG. 1 D, a number of boundaries 13, which are formed by the lattices 15 being arranged chaotically, are too large. Moreover, referring to FIG. 1 E, after the repair line 12 is formed by coating the film, there is a split 14 on the surface of the repair line 12, such that the repair line 12 has a rugged surface. The above-mentioned two situations lead to an impedance increase of the surface of the repair line 12, resulting in a resistance increase of the repair line 12, such that an electrical conductivity of the repaired wire 10 decreases. The performance of the signal transmission of the wire 10 is influenced. Therefore, the conventional repair machine and method for repairing a broken line are only capable of repairing a wire with a broken length less than 100 micrometers. If the broken length of the wire is larger than 100 micrometers, the array substrate will be regard as a nonconforming product that needs to be abandoned, whereby the production rate of the array substrate is influenced.

SUMMARY OF THE INVENTION

An objective of the present invention is to provide a repair apparatus for a broken line of an array substrate, thereby solving the technical problem that the molecules of a repair surface of a repair line are arranged chaotically, to influence the capability of the signal transmission of the wire and further to influence the repair length, after a broken-line defect of a wire is coated to forming the repair line.

To achieve the foregoing objective, a repair apparatus for a broken line of an array substrate constructed in the present invention includes: a repair unit for forming a repair line on a broken-line defect of a wire on the array substrate for conducting the wire; a heating unit for making a surface of the repair line reach a predetermined temperature, so as to heat the repair line formed by the repair unit.

In one preferred embodiment of the present invention, the repair unit specifically includes: a removal module for removing a protective layer on both ends of the broken-line defect to expose the both ends of the broken-line defect; and a plated-wire module for forming the repair line on the broken-line defect by using a repair material for connecting the wire.

In one preferred embodiment of the present invention, the repair material is chromium hexacarbonyl.

In one preferred embodiment of the present invention, the repair material is molybdenum hexacarbonyl.

In one preferred embodiment of the present invention, the repair material is tungsten hexacarbonyl. In one preferred embodiment of the present invention, the heating unit is further utilized to heat the repair line formed by the repair unit through laser beams.

In one preferred embodiment of the present invention, the predetermined temperature is larger than a melting point of the repair material and less than a boiling point of the repair material.

Another objective of the present invention is to provide a repair apparatus for a broken line of an array substrate, thereby solving the technical problem that the molecules of a repair surface of a repair line are arranged chaotically, to influence the capability of signal transmission of the wire and further to influence the repair length, after a broken-line defect of a wire is coated to forming the repair line.

To achieve the foregoing objective, a repair apparatus for a broken line of an array substrate constructed in the present invention includes: a repair unit for forming a repair line on a broken-line defect of a wire on the array substrate; and a heating unit for heating the repair line formed by the repair unit.

In one preferred embodiment of the present invention, the repair unit specifically includes: a removal module for removing a protective layer on both ends of the broken-line defect to expose the both ends of the broken-line defect; and a plated-wire module for forming the repair line on the broken-line defect by using a repair material for connecting the wire.

In one preferred embodiment of the present invention, the repair material is chromium hexacarbonyl.

In one preferred embodiment of the present invention, the repair material is molybdenum hexacarbonyl.

In one preferred embodiment of the present invention, the repair material is tungsten hexacarbonyl.

In one preferred embodiment of the present invention, the heating unit is further utilized to heat the repair line formed by the repair unit through laser beams.

In one preferred embodiment of the present invention, a heating unit is further utilized to make a surface of the repair line reach a predetermined temperature, wherein the predetermined temperature is larger than a melting point of the repair material and less than a boiling point of the repair material.

Yet another objective of the present invention is to provide a method for repairing a broken line of an array substrate, thereby solving the technical problem that the molecules of a repair surface of a repair line are arranged chaotically, to influence the capability of signal transmission of the wire and further to influence the repair length, after a broken-line defect of a wire is coated to forming the repair line.

To achieve the foregoing objective, a method for repairing a broken line of an array substrate constructed in the present invention includes the following steps of: forming a repair line on a broken-line defect of a wire on the array substrate; and heating the formed repair line.

In one preferred embodiment of the present invention, the step of forming the repair line on the broken-line defect of the wire on the array substrate specifically includes: removing a protective layer on both ends of the broken-line defect to expose the both ends of the broken-line defect; and forming the repair line on the broken-line defect by using a repair material for connecting the wire.

In one preferred embodiment of the present invention, the repair material is chromium hexacarbonyl, molybdenum hexacarbonyl, or tungsten hexacarbonyl.

In one preferred embodiment of the present invention, the step of heating the formed repair line specifically includes: heating the formed repair line through a laser beam heat treatment.

In one preferred embodiment of the present invention, the step of heating the formed repair line specifically includes: making a surface of the repair line reach a predetermined temperature, wherein the predetermined temperature is larger than a melting point of the repair material and less than a boiling point of the repair material.

In comparison with the prior art, the repair line is formed on the broken-line defect of the wire for connecting the wire, and the repair line is treated by the high temperature heating, so that the molecules of the surface of the repair line are rearranged in sequence according a predetermined rule. Accordingly, lattice boundaries on the surface of the repair line can be reduced for making the surface of the repair line uniform, so as to decrease the resistance of the repair line and increase the capability of the signal transmission of the wire. Therefore, the repair for a longer broken-line defect can be achieved.

It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.

DESCRIPTION OF THE DRAWINGS

FIG. 1A to FIG. 1E are schematic drawings illustrating a wire with a broken-line defect being repaired in the prior art;

FIG. 2 is a schematic drawing illustrating a repair apparatus for a broken line of an array substrate in the present invention;

FIG. 3 is a schematic drawing illustrating an array substrate with a broken line;

FIG. 4 is a partial enlarged view of FIG. 3;

FIG. 5 is a schematic drawing illustrating a repaired broken line that is the broken line in

FIG. 4 being repaired by the repair apparatus in FIG. 2;

FIG. 6 is a schematic drawing illustrating lattices on a surface of the repair line after the repair line is heated in the present invention;

FIG. 7 is a schematic drawing illustrating lattice boundaries on the surface of the repair line after the repair line is heated in the present invention;

FIG. 8 is a schematic drawing illustrating a split on the surface of the repair line after the repair line is heated in the present invention; and

FIG. 9 is a flow chart illustrating a method for repairing a broken line of an array substrate according to the preferred embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Descriptions of the following embodiment refer to attached drawings which are utilized to exemplify specific embodiments. Directional terms mentioned in the present invention, such as “top” and “down”, “front”, “rear”, “left”, “right”, “inside”, “outside”, “side” and so on are only directions with respect to the attached drawings. Therefore, the used directional terms are utilized to explain and understand the present invention but not or limit the present invention. In different drawings, the same reference numerals refer to like parts throughout the drawings.

Referring to FIG. 2, FIG. 2 is a schematic drawing illustrating a repair apparatus 20 for a broken line of an array substrate according to a preferred embodiment of the present invention.

The repair apparatus 20 for a broken line of the array substrate is utilized to repair a broken line of an array substrate. The repair apparatus 20 for the broken line of the array substrate includes a repair unit 21 and a heating unit 22, and the repair unit 21 specifically includes a removal module 211 and a plated-wire module 212.

Referring to FIG. 3, FIG. 4, and FIG. 5, FIG. 3 is a schematic drawing illustrating an array substrate with a broken line, and FIG. 4 is a partial enlarged view illustrating a broken-line defect existing on a wire in FIG. 3, and FIG. 5 is a schematic drawing illustrating a repaired broken line that is the broken line in FIG. 4 being repaired by the repair apparatus 20 in FIG. 2.

In FIG. 3, there are a plurality of wires 31, such as scan lines 311 and data lines 312, formed on the array substrate 30. The scan lines 311 and the data lines 312 intersect perpendicularly to each other for defining a plurality of pixels 313, and the pixels 313 includes pixels R, pixels G, and pixels B. Switching elements are disposed in the pixels 313. For example, the switching elements are thin-film transistors (TFT) which includes gates, sources, and drains (not shown). The scan lines 311 and the data lines 312 herein are usually covered with a protective layer. After fabricating the array substrate 30, the array substrate 30 needs to be inspected. Once a broken-line defect 32 is detected in the wires 31 of the array substrate 30, it can be repaired by the repair apparatus 20 provided in the present invention.

In FIG. 4, the broken-line defect 32 divides the wire 31 into a first wire 33 and a second wire 34, both of which are disconnected. In FIG. 5, the repair unit 21 of the repair apparatus 20 forms a repair line 40 for connecting the first wire 33 and the second wire 34, and the heating unit 22 heats the formed repair line 40.

Referring to FIG. 2 again, because there is usually the protective layer (not shown) covering the wires 31 for protecting the wires 31 on the array substrate 30, the protective layer on both ends of the broken-line defect 32 is firstly removed by the removal module 211 according to the present invention so as to expose the both ends of the broken-line defect 32. The removal module 211 can be a laser fusing equipment, which takes a laser beam with a high power to remove the protective layer on the both ends of the broken-line defect 32.

After the protective layer on the both ends of the broken-line defect 32 is removed by the removal module 211 to expose the both ends of the broken-line defect 32, the plated-wire module 212 takes a repair material to form the repair line 40 on the broken-line defect 32, so as to connect the first wire 33 and the second wire 34 for making the wire 31 conduct electricity.

The plated-wire module 212 herein can be an evaporation coating device, a sputtering device, and so on. The repair material can be chromium hexacarbonyl Cr(CO)₆, molybdenum hexacarbonyl Mo(CO)₆, tungsten hexacarbonyl W(CO)₆, and so on. To take the tungsten hexacarbonyl as an example in the embodiment, the tungsten hexacarbonyl herein has a boiling point T1 and a melting point T2, in which the boiling point T1 is 175 degrees centigrade and the melting point T2 is 170 degrees centigrade.

After forming the repair line 40, the heating unit 22 heats the repair line 40 that is formed by the repair unit 21. Preferably, the heating unit 22 in the present invention is a laser heating equipment, which takes a laser beam to heat. That is, the laser heating equipment creates a high temperature by emitting a highly concentrated power beam, so as to heat the repair line 40 to the high temperature.

The heating unit 22 herein makes a surface of the repair line 40 reach a predetermined temperature T3, in which the predetermined temperature T3 is close to a melting point of the repair material and less than a boiling point of the repair material. For example, the predetermined temperature T3 is larger than the melting point T2 of the repair material and less than the boiling point T1 of the repair material. Taking the repair material, tungsten hexacarbonyl, for example, the predetermined temperature T3 is about 170 degrees centigrade and less than 175 degrees centigrade, such as 165 degrees centigrade, 170 degrees centigrade, 173 degrees centigrade, and so on, so that the surface of the repair line 40 can be melted but not volatilized.

Under the heating at the predetermined temperature T3, the molecules which constitute the repair line 40 are arranged in sequence according to a predetermined rule. The predetermined rule means that the molecules are arranged in sequence along a certain direction. Referring to FIG. 6, FIG. 6 is a schematic drawing illustrating an arrangement of lattices after the repair line is heated. The lattices 41 which consist of the molecules are also arranged according to the predetermined rule, so that the lattice boundaries 42 on the surface of the repair line 40 are significant reduced. Referring to FIG. 7, FIG. 7 is a schematic drawing illustrating the lattice boundaries on the surface of the repair line 40 that is heated by the heating unit 22. Accordingly, the resistance of the surface of the repair line 40 can be extremely reduced, so that signals can be transmitted easily. The electric conductivity of the wire 30 also can be improved.

Referring to FIG. 8, FIG. 8 is a schematic drawing illustrating a split on the surface of the repair line 40 after the repair line 40 is heated. After the heating unit 22 heats the repair line 40 to the high temperature, the molecules on the surface of the repair line 40 are arranged in sequence according to the predetermined rule. The molecules with regular movement can fill the split on the surface of the repair line 40, so that the surface of the repair line 40 are relative uniform (in comparison with FIG. 1 E). The problem of the bigger split on the surface of the repair line 40 is improved. Accordingly, the resistance of the surface of the repair line 40 can be extremely reduced, so that the signals can be transmitted easily. The electric conductivity of the wire 30 also can be improved.

The repair apparatus 20 of the present invention performs the repair of the broken-line defect 32 existing in the wire 31 by the repair unit 21. The repair line 40 is formed on the broken-line defect 32, and then the repair line 40 is treated by the high temperature heating, so that the molecules constituting the repair line 40 are arranged in sequence according the predetermined rule. Thus, a number of the lattice boundaries on the surface of the repair line 40 is reduced, thereby making the surface of the repair line 40 uniform. The resistance of the repair line 40 is decreased, and the capability of the wire 31 for signal transmission is increased.

Moreover, the molecules of the surface of the repair line 40 can be arranged in sequence by means of the high temperature heating, so the resistance of the repair line is decreased. Therefore, the wire with a longer broken-line defect can be repaired in the present invention. For example, the broken-line defect which is larger than 100 micrometers (um) can be repaired.

FIG. 9 is a flow chart illustrating a method for repairing a broken line of an array substrate according to the preferred embodiment of the present invention.

At step S901, the step is to remove a protective layer on both ends of the broken-line defect 32 to expose the both ends of the broken-line defect 32. The broken-line defect 32 herein exists on the wire 31. The wire 31 is divides into the first wire 33 and the second wire 34, both of which are disconnected, due to the existence of the broken-line defect 32.

In practical execution, the laser fusing equipment can be employed to remove the protective layer on the both ends of the broken-line defect 32. The laser fusing equipment takes a laser beam with a high power to fuse the protective layer on the both ends of the broken-line defect 32.

At step S902, the step is to take a repair material to form the repair line 40, so as to connect the first wire 33 and the second wire 34 for making the wire 31 conduct electricity.

In practical execution, the repair line 40 can be formed by evaporation coating, sputtering, and so on. The repair material can be chromium hexacarbonyl Cr(CO)₆, molybdenum hexacarbonyl Mo(CO)₆, tungsten hexacarbonyl W(CO)₆, and so on. The repair material has the boiling point T1 and the melting point T2. For example, the boiling point T1 of the tungsten hexacarbonyl is 175 degrees centigrade and the melting point T2 thereof is 170 degrees centigrade.

At step S903, the step is to heat the repair line 40, so that the molecules constituting the repair line 40 are arranged in sequence according the predetermined rule. In practical execution, the repair line 40 can be heated by a laser heating equipment. The laser heating equipment is capable of heating to a predetermined temperature T3, in which the predetermined temperature T3 is close to a melting point T2 of the repair material and less than a boiling point T1 of the repair material. For example, the predetermined temperature T3 is larger than the melting point T2 of the repair material and less than the boiling point T1 of the repair material. Taking the repair material, tungsten hexacarbonyl, for example, the predetermined temperature T3 is about 170 degrees centigrade and less than 175 degrees centigrade, such as 165 degrees centigrade, 170 degrees centigrade, 173 degrees centigrade, and so on, so that the repair line 40 can be melted but not volatilized.

The detail processes with regard to the method can refer to the above-mentioned detail description for the repair apparatus, so no further detail will be provided herein. In the present invention, after the repair line is formed on the broken-line defect, and then the repair line is treated by the high temperature heating, so that the molecules constituting the repair line are arranged in sequence according the predetermined rule. Thus, the number of the lattice boundaries on the surface of the repair line is reduced, thereby making the surface of the repair line uniform. The resistance of the repair line is decreased, and the capability of the signal transmission of the wire is increased. Moreover, because the resistance of the repair line is decreased, the wire with a longer broken-line defect can be repaired. For example, the broken-line defect which is larger than 100 micrometers (um) can be repaired.

While the preferred embodiments of the present invention have been illustrated and described in detail, various modifications and alterations can be made by persons skilled in this art. The embodiment of the present invention is therefore described in an illustrative but not restrictive sense. It is intended that the present invention should not be limited to the particular forms as illustrated, and that all modifications and alterations which maintain the spirit and realm of the present invention are within the scope as defined in the appended claims. 

What is claimed is:
 1. A repair apparatus for a broken line of an array substrate, comprising: a repair unit for forming a repair line on a broken-line defect of a wire on the array substrate for connecting the wire; and a heating unit for making a surface of the repair line reach a predetermined temperature, so as to heat the repair line formed by the repair unit.
 2. The repair apparatus of claim 1, wherein the repair unit specifically comprising: a removal module for removing a protective layer on both ends of the broken-line defect to expose the both ends of the broken-line defect; and a plated-wire module for forming the repair line on the broken-line defect by using a repair material for connecting the wire.
 3. The repair apparatus of claim 2, wherein the repair material is chromium hexacarbonyl.
 4. The repair apparatus of claim 2, wherein the repair material is molybdenum hexacarbonyl.
 5. The repair apparatus of claim 2, wherein the repair material is tungsten hexacarbonyl.
 6. The repair apparatus of claim 1, wherein the heating unit is further utilized to heat the repair line formed by the repair unit through laser beams.
 7. The repair apparatus of claim 1, wherein the predetermined temperature is larger than a melting point of the repair material and less than a boiling point of the repair material.
 8. A repair apparatus for a broken line of an array substrate, comprising: a repair unit for forming a repair line on a broken-line defect of a wire on the array substrate; and a heating unit for heating the repair line formed by the repair unit.
 9. The repair apparatus of claim 8, wherein the repair unit specifically comprising: a removal module for removing a protective layer on both ends of the broken-line defect to expose the both ends of the broken-line defect; and a plated-wire module for forming the repair line on the broken-line defect by using a repair material for connecting the wire.
 10. The repair apparatus of claim 9, wherein the repair material is chromium hexacarbonyl.
 11. The repair apparatus of claim 9, wherein the repair material is molybdenum hexacarbonyl.
 12. The repair apparatus of claim 9, wherein the repair material is tungsten hexacarbonyl.
 13. The repair apparatus of claim 8, wherein the heating unit is further utilized to heat the repair line formed by the repair unit through laser beams.
 14. The repair apparatus of claim 8, wherein a heating unit is further utilized to make a surface of the repair line reach a predetermined temperature, wherein the predetermined temperature is larger than a melting point of the repair material and less than a boiling point of the repair material.
 15. A method for repairing a broken line of an array substrate, the method comprising the following steps of: forming a repair line on a broken-line defect of a wire on the array substrate; and heating the formed repair line.
 16. The method of claim 15, wherein the step of forming the repair line on the broken-line defect of the wire on the array substrate specifically comprises: removing a protective layer on both ends of the broken-line defect to expose the both ends of the broken-line defect; and forming the repair line on the broken-line defect by using a repair material for connecting the wire.
 17. The method of claim 16, wherein the repair material is chromium hexacarbonyl, molybdenum hexacarbonyl, or tungsten hexacarbonyl.
 18. The method of claim 15, wherein the step of heating the formed repair line specifically comprises: heating the formed repair line by a laser beam heat treatment.
 19. The method of claim 15, wherein the step of heating the formed repair line specifically comprises: making a surface of the repair line reach a predetermined temperature, wherein the predetermined temperature is larger than a melting point of the repair material and less than a boiling point of the repair material. 